| PART |
Description |
Maker |
| GS74108AGX-12I GS74108AJ-12I GS74108AJ-10I GS74108 |
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO36
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO44
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 10 ns, PBGA48
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 8 ns, PDSO44
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 8 ns, PDSO36
|
SRAM
GSI Technology, Inc.
|
| GS74104ATJ |
1M x 4 4Mb Asynchronous SRAM
|
GSI Technology
|
| GS74116TP-15 GS74116TP-10 GS74116TP-10I GS74116TP- |
256K x 16 4Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
| GS74108ATJ |
512K x 8 4Mb Asynchronous SRAM
|
GSI Technology
|
| GS74117AX-12 GS74117AX-8 GS74117AX-7I GS74117AX-10 |
256K x 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 8 ns, PBGA48
256K x 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 7 ns, PBGA48
256K x 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 10 ns, PBGA48
|
SRAM
GSI Technology, Inc.
|
| GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS84 |
10ns 256K x 18 4Mb sync burst SRAM
12ns 256K x 18 4Mb sync burst SRAM
8.5ns 256K x 18 4Mb sync burst SRAM
8ns 256K x 18 4Mb sync burst SRAM
10ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
| N04L163WC1AT2-70I N04L163WC1A N04L163WC1AB N04L163 |
4Mb Ultra-Low Power Asynchronous CMOS SRAM
|
NANOAMP[NanoAmp Solutions, Inc.]
http://
|
| GS71024T-8T GS71024T-10T GS71024T-10IT GS71024U-10 |
8ns 64K x 24 1.5Mb asynchronous SRAM
1.5Mb4K x 24Bit）Asynchronous SRAM(1.5M位（64K x 24位）异步静态RAM) 即：1.5MB4K的x 24位）异步SRAM50万位4K的24位）异步静态RAM）的
x24 SRAM x24的SRAM
|
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
|
| HM62W8511HCLJP-12 HM62W8511HC HM62W8511HCJP-10 HM6 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (512-kword x 8-bit)
BOX 5.0X1.85X1.0 W/CLP BLK
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
